Samsung Electronics will join a consortium led by ASML to develop next-generation 12-inch photomasks. By 2028, the company plans to introduce 'High NA EUV' equipment for advanced DRAM manufacturing, marking a significant innovation in the industry. This initiative aims not only to adopt new lithography equipment but also to establish the necessary photomask standards and manufacturing ecosystem.
On September 8, Samsung announced its participation in ASML's 'Large Size Mask Consortium,' focusing on joint research and standard development for 12-inch photomasks. The goal is to transition from the currently used 6-inch masks to 12-inch ones.
A photomask is a template that contains the semiconductor circuit patterns. As the manufacturing process becomes more intricate, the precision and specifications of the masks become increasingly critical, as the lithography equipment projects light through the mask onto the wafer to create circuits.
With High NA EUV, the reduced exposure area may necessitate a process called 'stitching,' where larger chips are printed in segments and then connected. Utilizing 12-inch masks can mitigate these constraints, simplifying the process and enhancing productivity.
The 12-inch large mask has been discussed as a solution to reduce stitching issues associated with High NA EUV. However, changing the entire supply chain—from the mask substrate to circuit recording, inspection, transportation, and lithography equipment—requires collaboration among equipment manufacturers, semiconductor producers, and the photomask ecosystem to establish common standards, which is seen as a key challenge for commercialization.
Samsung plans to apply High NA EUV technology to advanced DRAM manufacturing starting in 2028. This technology can create finer circuits than existing EUV, potentially delaying the limits of DRAM miniaturization and reducing the need for repetitive patterning processes.
Previously, Samsung was the first in the industry to apply EUV technology to mass-produce DRAM, reducing multi-patterning processes and increasing productivity. This time, the company aims to expand the next-generation lithography technology, initially applied in foundry, to memory production, enhancing the competitiveness of high-performance DRAM for AI applications.
Jin Young-hyun, Vice Chairman and CEO of Samsung Electronics, stated, "We will continue to lead advanced semiconductor manufacturing, including foundry and memory, and strengthen our collaboration with ASML to establish a technological foundation for 'Next AI.'"
* This article has been translated by AI.
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