SK Hynix to Introduce ASML's Next-Generation EUV Equipment for DRAM Production by 2028

SK Hynix plans to implement ASML's next-generation High NA extreme ultraviolet (EUV) lithography equipment in its DRAM production process by 2028. This move aims to enhance the performance and cost competitiveness of next-generation DRAM by surpassing the limitations of current fine process technologies.

According to reports from Reuters and others on September 9, SK Hynix has set a goal to apply the High NA EUV process to DRAM mass production by 2028. The company is also considering participation in the Large Size Mask Consortium led by TSMC.

High NA EUV represents a new lithography technology capable of creating finer circuits than existing EUV equipment. The numerical aperture (NA), which indicates the light-gathering ability, will increase from 0.33 in current EUV systems to 0.55. This advancement allows for the formation of finer patterns in a single step, reducing the number of process stages while improving semiconductor performance and productivity.

Since first applying EUV technology to the mass production of 10-nanometer class fourth-generation (1a) DRAM in 2021, SK Hynix has been expanding its use in advanced DRAM applications. The introduction of High NA EUV is expected to simplify existing EUV processes and accelerate the development of next-generation memory.

SK Hynix is also joining efforts to change the standards for semiconductor lithography processes. The company is reviewing participation in a consortium aimed at scaling up photomasks from the current 6-inch size to 12 inches. Photomasks are essential for transferring semiconductor circuit patterns onto wafers, and increasing their size can enhance the productivity and efficiency of next-generation lithography processes.

The consortium includes global semiconductor companies such as ASML, with Samsung Electronics already involved. If SK Hynix joins, it could intensify the competition over technological standards in the global semiconductor industry regarding next-generation EUV equipment and large photomasks.