SK Hynix has officially begun supplying samples of its next-generation high-performance DRAM, 'HBM4E.' This announcement comes just a month after Samsung Electronics shipped its own samples, marking a renewed competition between the two companies in the AI memory market.
On June 18, SK Hynix revealed that it has supplied 12-layer samples of its 7th generation high-bandwidth memory (HBM4) to key customers. This product is a successor to the 6th generation HBM (HBM4) currently in mass production, designed to maximize data processing performance essential for AI learning and inference. Initially expected to be released in the second half of this year, the timeline was accelerated due to smooth progress in its development.
The new product boasts enhanced performance and power efficiency compared to its predecessor. It achieves data processing speeds of up to 16 Gbps per pin and improves energy efficiency by over 20% through optimized power design.
Notably, SK Hynix has applied its proprietary 'Advanced MR-MUF' process, achieving structural stability while reducing thermal resistance by approximately 17% compared to the previous generation. This advancement allows for more effective heat management in AI computing environments.
SK Hynix stated, "We are closely collaborating with our key customers based on our accumulated HBM development capabilities and production know-how. We will ensure timely mass production to proactively deliver the value demanded by the market."
In response, Samsung Electronics is also making significant strides. At the end of May, the company showcased its technology by supplying the world's first HBM4E 12-layer samples to global customers. This follows its announcement in February of the world's first mass production shipment of HBM4 products, highlighting its aggressive approach to the next-generation lineup.
Samsung's HBM4E incorporates its validated 10-nanometer class 6th generation (1c) DRAM and a 4-nanometer foundry process, ensuring both productivity and process stability. The low-power design improves energy efficiency by 16% and enhances thermal resistance characteristics by over 14%. The company's 'one-stop turnkey' strategy aims to secure a competitive edge in the supply chain for major tech firms.
Both companies have entered a fierce second round of competition to dominate the next-generation AI supply chain. As the bidding war reignites for HBM4E, the company that successfully navigates the rigorous validation and final approval processes from customers is likely to gain the upper hand.
Ahn Gi-hyun, executive director of the Korea Semiconductor Industry Association, noted, "Both companies are progressing with next-generation product development and validation faster than expected. The timing of passing the final quality tests by global tech customers and the speed of transitioning to mass production will be pivotal in determining the future leadership of the AI memory market."
* This article has been translated by AI.
Copyright ⓒ Aju Press All rights reserved.