SK Hynix has officially begun supplying samples of its next-generation AI-focused high-performance DRAM, 'HBM4E.' This announcement comes just a month after Samsung Electronics shipped its own samples, marking the start of a fierce competition for dominance in the AI memory market following the HBM4 launch.
On June 18, SK Hynix revealed it has supplied 12-layer samples of its 7th generation high-bandwidth memory (HBM4) to key customers. This new product is a successor to the currently mass-produced 6th generation HBM (HBM4) and is designed to maximize data processing performance essential for AI training and inference. Initially expected to be supplied in the second half of the year, the timeline was accelerated due to smooth progress in its development schedule.
The new model has evolved in terms of performance and energy efficiency compared to its predecessor. It achieves a maximum data processing speed of 16 Gbps per pin and improves energy efficiency by over 20% through optimized power design.
Notably, it employs SK Hynix's proprietary 'Advanced MR-MUF' process, enhancing structural stability. Despite offering a high capacity of 48GB based on 12-layer stacking, it reduces thermal resistance by approximately 17% compared to the previous generation. This advancement allows for more effective heat management in AI computing environments.
SK Hynix stated, "We are closely collaborating with our key customers based on our accumulated HBM development capabilities and production know-how. We will ensure timely mass production to proactively meet market demands."
In response, Samsung Electronics has also made significant strides. At the end of May, it became the first in the world to supply 12-layer samples of HBM4E to global customers, leveraging its advanced technology. This move follows just three months after announcing the world's first mass production shipment of HBM4 products in February.
Samsung's HBM4E combines its validated 10-nanometer 6th generation (1c) DRAM with a 4-nanometer foundry process, ensuring both productivity and process stability. It improves energy efficiency by 16% through low-power design and enhances thermal resistance characteristics by over 14%. The company's 'one-stop turnkey' strategy aims to create strong synergies and secure a competitive edge in the big tech supply chain.
With both companies completing their sample supplies within a month, industry experts assess that a fierce second round of competition for the next-generation AI supply chain has commenced. As the bidding war reignites for HBM4E, the ability to pass stringent customer quality tests and final approvals will likely determine market leadership.
Ahn Gi-hyun, Executive Director of the Korea Semiconductor Industry Association, noted, "Both companies are progressing faster than expected in the development and verification of next-generation products. The timing of passing the final quality tests by global big tech customers and the speed of transitioning to mass production will be pivotal in determining the future leadership of the AI memory market."
* This article has been translated by AI.
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