SEOUL, May 29 (AJP) - Samsung Electronics has begun shipping samples of its 12-layer HBM4E memory chips to global customers. According to the company on Friday, this is the semiconductor industry's first 12-layer HBM4E sample to be shipped.
The new memory component delivers a stable pin speed of 14 gigabits-per-second (Gbps) and is capable of scaling up to 16 Gbps. This marks a performance increase of more than 20 percent compared to Samsung's previous generation of HBM4 chips. Additionally, the 12-layer HBM4E provides a memory bandwidth of up to 3.6 terabytes-per-second (TB/s) per stack.
In terms of capacity, the 12-layer HBM4E offers 48 gigabytes (GB), which represents a capacity increase of over 30 percent from the previous generation. Samsung plans to further expand this lineup to include 32GB 8-layer and 64GB 16-layer configurations to meet varying customer requirements.
The HBM4E utilizes Samsung's sixth-generation 10-nanometer-class (1c) DRAM process paired with a 4-nanometer logic base die manufactured by Samsung Foundry. The company reported that optimized packaging and low-power design technologies have improved the chips' energy efficiency by 16 percent. Furthermore, thermal resistance characteristics have been improved by more than 14 percent compared to the prior generation, aiding in heat dissipation for data centers running intensive workloads.
The release of these samples follows Samsung's mass production and commercial shipment of HBM4 chips, which began earlier this year in February. The previous HBM4 model reached speeds of 11.7 Gbps during system in package (SiP) tests last December.
"Following the successful mass production of HBM4, Samsung has once again demonstrated its distinct technological edge with HBM4E," said Sang Joon Hwang, Executive Vice President and Head of Memory Development at Samsung Electronics. "Through our advanced manufacturing capabilities and preemptive infrastructure investments, we will continue to drive the growth of the global AI memory market."
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